刘贵鹏，男，汉族，副教授。2008年毕业于吉林大学微电子学专业，获得理学学士学位；2013年毕业于中国科学院大学（中国科学院半导体研究所），获得工学博士学位，导师为朱勤生研究员。2013.7-2015.5，工作于中国科学院半导体研究所，助理研究员。2015.7至今 工作于兰州大学物理科学与技术学院。发表SCI论文40余篇，第一作者8篇。主持并完成国家自然科学基金青年基金一项，主持甘肃省自然基金面上项目一项。
					

						1、宽禁带半导体材料（SiC、GaN）电子器件、光电探测器件、发光器件性质研究；InGaAs基雪崩光电探测器（APD）等半导体器件数值模拟；二维材料（黑磷）性质及器件研究；

2、现场可编程逻辑门阵列（FPGA）设计（主要针对本科生）；

					

						主要课程：《半导体材料》，《集成电路计算机辅助设计（ICCAD）》，微电子专业实验（FPGA部分）。
					

						1.Guipeng Liu*, Xin Wang, Jingze Zhao, Wenjie Chen, Yonghui Tian, Jianhong Yang*, “Modeling a novel InP/InGaAs avalanche photodiode structure: Reducing the excess noise factor”, Optics Communications 435 , 374, 2019
2.Gui-Peng Liu*, Xin Wang, Meng-Nan Li, Zheng-Peng Pang,Yong-Hui Tian, Jian-Hong Yang*, “Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode ” Nuclear science and techniques,29,139,2018 
3.Guipeng Liu *, Wenjie Chen , Linsheng Liu, Peng Jin, Yonghui Tian, JianhongYang ，“A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers ”，Optics Communication 374，114，2016
4. Guipeng Liu* ,JinfengZhang , KunyiLu, WenjieChen, YonghuiTian, JianhongYang， “Two-dimensionalelectrongas(2DEG) mobility affected by the In mole fraction fluctuation in InxAl1-xN/GaN heterostructures”，Physica E 83, 207, 2016
5. Guipeng Liu*, Ju Wu, Guijuan Zhao, Shuman Liu, Wei Mao, Yue Hao, Changbo Liu, Shaoyan Yang, Xianglin Liu, Qinsheng Zhu*, and Zhanguo Wang, “Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures”, Applied Physics Letters 100, 082101 ，2012 
6. Guipeng Liu*, Ju Wu, Yanwu Lu, Guijuan Zhao, Chengyan Gu, Changbo Liu, Ling Sang, Shaoyan Yang, Xianglin Liu, Qinsheng Zhu*, and Zhanguo Wang, “Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN /GaN multi-quantum wells”, Applied Physics Letters 100, 162102 ，2012 
7. Guipeng Liu, Ju Wu, Yanwu Lu, Biao Zhang, Chengming Li, Ling Sang, Yafeng Song, Kai Shi, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, and Zhanguo Wang, “A theoretical calculation of the impact of GaN Cap and AlxGa1-xN barrier thickness fluctuations on two-dimensional electron gas in a GaN/ AlxGa1-xN/GaN heterostructure”, IEEE Transaction on Electron Devices, 58, 4272 ，2011
8.Guipeng Liu*，  Ju Wu, Yanwu Lu, Zhiwei Li,Yafeng Song, Chengming Li,Shaoyan Yang, Xianglin Liu,  Qinsheng Zhu*， and Zhanguo Wang，“Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures”， Journal of Applied Physics 110, 023705
					

						1.国家自然基金青年基金， GaN/AlGaN异质结构中载流子输运性质的时间分辨光谱研究，61404132，2015.1-2017.12 （已结题）
2.甘肃省科技计划项目， 质子辐照下GaN基HEMT器件退化机理研究， 18JR3RA285， 2018.7-2020.6