I have been devoted to the study of transport properties in magnetic and semiconductor materials for a long time.
In human history, magnetism is one of the ancient and mysterious subjects. At present, magnetism has developed many branches, one of which is spintronics. The main content of spintronics is to study the generation, manipulation and measurement of spin. I have been committed to the measurement of transport behavior of magnetic materials for a long time. I have a good command of the preparation of magnetic film samples, micro nano processing and testing process of devices, and I am good at building a test platform quickly through LabVIEW software. For example, the test methods of SOT currently include DC method, harmonic method, ST-FMR method and optical method. Different instruments (Keithley power supply, data acquisition card, lock-in amplifier, microwave source, etc.) are used, and I can independently complete the construction and test of the test platform (see article 2,5 for related work).
The development of modern society is inseparable from semiconductor materials. Due to its unique band structure, there are still many properties in semiconductor materials to be studied. During my Ph.D., I did a systematic research on "magnetoresistance of silicon-based semiconductor materials". In non-magnetic semiconductor materials, there is magnetic field related transport behavior, which has great development potential. For example, the magnetoresistance of semiconductor materials can supplement the application scope of traditional magnetic materials (see article 4, 6, 7, 9, 12 for relevant work).
In addition, the combination of semiconductor materials and other materials is one of my research interests. Due to the compatibility with technology, semiconductor materials and many materials can form Schottky junctions and other structures. There are abundant physical phenomena under the action of various external fields such as force, heat, light, electricity and magnetism (see articles 1 and 3 for relevant work). The research on these devices can not only deepen our understanding of the nature of the world, but also promote the development of science and technology.
In the future, I will also focus on the preparation and testing of new materials (such as topological materials).
I am confident and self-discipline, cheerful and lively, conscientious and practical, and curious. With strong exploration ability and good team spirit, I have accumulated some experience in school and social work, cultivated good hands-on and summary ability in the research process, like and can face challenges in different environments with a good attitude.
Life maxim: the road is long and the road is long. I will go up and down.
1. Bo Wang, Yonghai Guo, Bo Han, Ze Yan, Tao Wang, Dezheng Yang, Xiaolong Fan, and Jiangwei Cao. The accurate measurement of spin orbit torque by utilizing the harmonic longitudinal voltage with Wheatstone bridge structure. Applied Physics Letters 116, 222402 (2020).
2. Cao, Y., Sui, W., Wang, T., Si, M., Shi, H., Yang, D. & Xue, D. Light-Induced-Magnetoresistance in p-n Junction Device. IEEE Electron Device Letters 41, 509-512 (2020).
3. Zheng, Y., Wang, T., Su, X., Chen, Y., Wang, Y., Lv, H., Cardoso, S., Yang, D. & Cao, J. Enhancement of spin-orbit torques in Ta/Co20Fe60B20/MgO structures induced by annealing. Aip Advances 7 (2017).
4. Wang, X., Wang, T., Yang, D., Yang, Z., Li, D., Chen, M., Si, M., Xue, D. & Zhang, Z. Electrically tunable large magnetoresistance in graphene/silicon Schottky junctions. Carbon 123, 106-111 (2017).
5. Wang, T., Yang, Z., Wang, W., Si, M., Yang, D., Liu, H. & Xue, D. Large magnetoresistance effect in nitrogen-doped silicon. Aip Advances 7 (2017).
6. Li, D., Cui, B., Wang, T., Yun, J., Guo, X., Wu, K., Zuo, Y., Wang, J., Yang, D. & Xi, L. Effect of inserting a non-metal C layer on the spin-orbit torque induced magnetization switching in Pt/Co/Ta structures with perpendicular magnetic anisotropy. Applied Physics Letters 110, 132407 (2017).
7. Zhou, J. K., Wang, T., Wang, W., Chen, S. W., Cao, Y., Liu, H. P., Si, M. S., Gao, C. X., Yang, D. Z. & Xue, D. S. Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling. Applied Physics Letters 109, 232404 (2016).
8. Wang, T., Yang, D., Si, M., Wang, F., Zhou, S. & Xue, D. Magnetoresistance Amplification Effect in Silicon Transistor Device. Advanced Electronic Materials 2, 1600174 (2016).
9. Chen, S., Han, J., Wang, T., Yang, D. & Xue, D. Temperature dependence of the ordinary Hall effect in ferrimagnetic Co83Gd17 thin films in Nanoelectronics Conference. 1-2, (2016).
10. Cao, Y., Wang, T., Yang, D. & Xue, D. Large magnetocapacitance in p-n junction. Nanoelectronics Conference. 1-2, (2016).
11. Yang, D. Z., Wang, T., Sui, W. B., Si, M. S., Guo, D. W., Shi, Z., Wang, F. C. & Xue, D. S. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions. Scientific Reports 5, 11096 (2015).
12. Han, J. W., Sui, W. B., Yang, D. Z., Wang, T., Li, Y., Xi, L., Si, M. S. & Xue, D. S. Scaling of the Anomalous Hall Effect in Ferrimagnetic Co90Gd10 Thin Films. IEEE Transactions on Magnetics 51, 1-4 (2015).
13. Wang, T., Si, M., Yang, D., Shi, Z., Wang, F., Yang, Z., Zhou, S. & Xue, D. Angular dependence of the magnetoresistance effect in a silicon based p–n junction device. Nanoscale 6, 3978-3983 (2014).
14. Wang, G. X., Dong, C. H., Yan, Z. J., Wang, T., Chai, G. Z., Jiang, C. J. & Xue, D. S. Controlling of magnetic domain structure by sputtering films on tilted substrates. Journal Of Alloys And Compounds 573, 118-121 (2013).
