Individual Resume:
Jin Zhiwen, professor, doctoral and master’s supervisor, and recipient of the National Youth Talent Program and recipient of the Gansu Provincial Outstanding Youth Fund. He was born in Shuozhou, Shanxi Province, in 1990. He received his bachelor’s degree in materials chemistry from Lanzhou University in 2011; and his Ph.D. from the Institute of Chemistry of the Chinese Academy of Sciences in 2016. He later engaged in postdoctoral research at Shaanxi Normal University. In October 2018, he was appointed as a full professor at Lanzhou University. He has successively received honors such as “Young people who excel at their jobs”, “Longyuan Youth Innovation and Entrepreneurship Talent” in Gansu Province, “Cuiying Scholar” at Lanzhou University, “Youth May Fourth Medal”, “Guohua Distinguished Scholar”, and “One of My Favorite Ten Teachers”. He has also been selected multiple times in the “Highly Cited Researchers Worldwide” list by Clarivate and the “Highly Cited Researchers in China” list by Elsevier.

Since he joined Lanzhou University as a principal investigator, his main research direction has been X-ray detection and imaging technology based on metal halides. He has published over 60 academic papers as a corresponding author in high-level academic journals, including Nat. Commun., Angew. Chem. Int. Ed., Adv. Mater., IEEE Electron Device Lett. He was also invited to contribute to books like “Advanced X-ray Detection: Medical Imaging and Industrial Applications” (published by Springer). He has led one National-level Youth Talent Program, received one Outstanding Youth Fund from Gansu Province, led five projects at the national and provincial levels, participated in one National Key Research and Development Plan, and one International (Regional) Cooperation and Exchange Project of the National Natural Science Foundation of China. Furthermore, He has also delivered invited presentations at several significant national and international academic conferences.

Academic Homepage: http://www.researcherid.com/rid/L-2907-2013
					
						He has established the “New Semiconductor Radiation Detection Technology” research team, including two professors, one young researcher, and two associate professors. The current research focuses on the Key scientific issues in the field of X-ray and γ-ray detection and imaging technology. By leveraging the inherent advantages of new semiconductor materials such as halides in X-ray and γ-ray energy conversion, the team aims to improve their photoelectric performance and irradiation stability, explore the photoelectric physics and device physics mechanisms that affect performance changes. The ultimate goal is to develop low-dose, high-resolution, large-area X-ray and γ-ray detection and imaging technologies with independent intellectual property. The team is also exploring the application of related technologies in the field of high-energy radiation (α, β, fast neutron, proton, cosmic ray, etc.).

Specific research directions:
1. Material optimization: materials’ structural design, optimization, synthesis, and macro-scale preparation of thin films;
2. Device characterization: device-related physics problems of detectors and structure design;
3. System validation: coupling integration, crosstalk suppression, packaging, and imaging system pre-development;

Enrollment:
The team plans to recruit 3-4 master students (in physics, materials, or microelectronics), and 2-3 doctoral students (in microelectronics, condensed matter, or energy and power) each year, with long-term recruitment of 1-2 postdoctoral researchers. Currently, there are 7 doctoral students and 13 master students under supervision. Hardworking and dedicated students aspiring to pursue scientific research are welcome to join us!
					
						Undergraduate courses:
2023 spring - present      Solid-state physics                             54-class-hours
2020 spring - present      Solid Luminescent Material (Joint lecture)          36-class-hours
2019 spring - 2022 spring   Probability Theory and Mathematical Statistics      54-class-hours

Postgraduate courses:
2022 autumn - present     Thesis Writing Guidance and Professional English
(Joint lecture)                                36-class-hours
2020 spring             Modern Semiconductor Device Physics             72-class-hours

The graduate students he has supervised have been awarded numerous honors, including “National Scholarship”, “Excellent Students in Gansu Province”, and “Outstanding Graduates in Gansu Province”, and have been approved for several provincial-level and university-level scientific research projects.
Furthermore, he actively mentors undergraduate students to participate in various research competitions, leading to several international, national, or provincial awards. He has also been awarded several times for his outstanding teaching and guidance.
						
						Publications
Books:
(1) Jin Zhiwen, Li Zhizai, Lan Wei and Wang Qian, Advanced X-Ray Radiation Detection: Medical Imaging and Industrial Applications, Chapter 2, “Low-Dimensional Semiconductor Materials for X-ray Detection”, Editor Kris Iniewski, Redlen Technologies, Canada, Publisher, Springer, 2023, pp 23-49.

Representative Papers:
Year 2023
(1) Li Zhizai; Peng Guoqiang; Li Zhenhua; Xu Youkui; Wang Tao; Wang Haoxu; Liu Zitong; Wang Gang; Ding Liming; Jin Zhiwen*, Angew. Chem. Int. Ed. 2023, 62, e202218349.
(2) Li Zhizai; Li ZhenHua; Peng Guoqiang; Shi Chang; Wang Haoxu; Ding San-Yuan; Wang Qian; Liu Zitong; Jin Zhiwen*, Adv. Mater. 2023, 35, 2300480.
(3) Li Zhizai; Shi Shenghuan; Peng Guoqiang; Wu Yujiang; Xie Hang; Wang Haoxu; Li ZhenHua; Jin Zhiwen*, Nano Lett. 2023, Accept.
(4) Peng Guoqiang; Li Zhizai; Li ZhenHua; Wang Haoxu; Jin Zhiwen*, IEEE Electron Device Letters 2023, 44, 967-970.
(5) Qiu Fu; Peng Guoqiang; Xu Youkui; Wang Haoxu; Jin Zhiwen*, Adv. Funct. Mater. 2023, 33, 2303417.

Year 2022
(1) Li Zhizai; Peng Guoqiang; Chen Huanyu; Shi Chang; Li ZhenHua; Jin Zhiwen*, Angew. Chem. Int. Ed. 2022, 61, e202207198.
(2) Xu Youkui; Li Yingtao; Peng Guoqiang; Wang Qian; Li Zhizai; Wang Haoxu; Wang Gang; Jin Zhiwen*, IEEE Electron Device Lett., 2022, 43, 1709-1712.
(3) Li Hengxin; Lei Yutian; Peng Guoqiang; Wang Qian; Li ZhenHua; Wang Haoxu; Wang Gang; Jin Zhiwen*, Adv. Funct. Mater. 2022, 32, 2208199.
(4) Yao Huanhuan; Li Zhizai; Shi Chang; Xu Youkui; Wang Qian; Li ZhenHua*; Peng Guoqiang; Lei Yutian; Wang Haoxu; Ci Zhipeng*; Jin Zhiwen*, Adv. Funct. Mater. 2022, 32, 2205029.
(5) Lei Yutian; Li Zhen-Hua; Wang Haoxu; Wang Qian; Peng Guoqiang; Xu Youkui; Zhang Haihua; Wang Gang; Ding Liming; Jin Zhiwen*, Sci. Bull. 2022, 67, 1352-1361.

Year 2021
(1) Li Zhizai; Zhou Faguang; Yao Huanhuan; Ci Zhipeng; Yang Zhou; Jin Zhiwen*, Mater. Today 2021, 48, 155-175.
(2) Li Zhizai; Ma Bo; Xu Youkui; Lei Yutian; Lan Wei; Wang Gang; Li Wenquan; Wang Qiang; Zhang Hao-Li*; Jin Zhiwen*, Adv. Funct. Mater. 2021, 31, 2106380.
(3) Chen Huanyu; Zhou Faguang; Jin Zhiwen*, Nano Energy 2021, 79, 105490
(4) Lei Yutian; Xu Youkui; Wang Meng; Zhu Ge*; Jin Zhiwen*, Small 2021, 17, 2005495.
(5) Zeng Qiang; Meng Xianyi; Fang Zhimin; Cheng Ming; Yang Shangfeng; Yuan Yongbo; Cheng Yuanhang; Jin Zhiwen*; Bao Qinye*; Liu Fangyang*; Hao Feng*; Ding Liming*, Sci. Bull. 2021, 66, 310-313.

Year 2020
(1) Li Lin; Chen Hongyu; Fang Zhimin; Meng Xianyi; Zuo Chuantian; Lv Menglan; Tian Yongzhi; Fang Ying; Xiao Zuo; Shan Chongxin; Xiao Zhengguo; Jin Zhiwen*; Shen Guozhen*; Shen Liang*; Ding Liming*, Adv. Mater. 2020, 32, 1907257.
(2) Xu Youkui; Wang Meng; Lei Yutian; Ci Zhipeng*; Jin Zhiwen*, Adv. Energy Mater. 2020, 10, 2002558.
(3) Zhou Faguang; Li Zhizai; Lan Wei; Wang Qian*; Ding Liming*; Jin Zhiwen*, Small Methods 2020, 4, 2000506.
(4) Yao Huanhuan; Zhou Faguang; Li Zhizai; Ci Zhipeng*; Ding Liming* and Jin Zhiwen*, Adv. Sci. 2020, 7, 1903540.
(5) Bian Hui; Wang Haoran; Li Zhizai; Zhou Faguang; Xu Youkui; Zhang Hong; Wang Qian; Ding Liming*; Liu Shengzhong* and Jin Zhiwen*, Adv. Sci. 7, 1902868.

Year 2019
(1) Zhang Jingru; Hodes Gary; Jin Zhiwen* and Liu Shengzhong*, Angew. Chem. Int. Ed. 2019, 58, 15596.
(2) Wang Kang; Li Zhizai; Zhou Faguang; Wang Haoran; Bian Hui; Zhang Hong; Wang Qian; Jin Zhiwen*; Ding Liming* and Liu Shengzhong*; Adv. Energy Mater. 2019, 9, 1902529.
(3) Liang Lei; Liu Miao; Jin Zhiwen*; Wang Qian; Wang Haoran; Bian Hui; Shi Feng* and Liu Shengzhong*, Nano Lett. 2019, 19, 1796-1804.
(4) Wang Kang; Jin Zhiwen*; Liang Lei; Bian Hui; Wang Haoran; Feng Jiangshan; Wang Qian* and Liu Shengzhong*, Nano Energy 2019, 58, 175-182.
(5) Wang Haoran; Bian Hui; Jin Zhiwen*, Zhang Hong; Liang Lei; Wen Jialun; Wang Qian*; Ding Liming* and Liu Shengzhong*, Chem. Mater. 2019, 31, 6231-6238.

Year 2018
(1) Wang Kang; Jin Zhiwen*; Liang Lei; Bian Hui; Bai Dongliang; Wang Haoran; Zhang Jingru; Wang Qian* and Liu Shengzhong*, Nat. Commun. 2018, 9, 4544.
(2) Bian Hui; Bai Dongliang; Jin Zhiwen*; Wang Kang; Liang Lei; Wang Haoran; Zhang Jingru; Wang Qian* and Liu Shengzhong*, Joule 2018, 2, 1500-1510.
(3) Zhang Jingru; Bai Dongliang; Jin Zhiwen*; Bian Hui; Wang Kang; Sun Jie; Wang Qian* and Liu Shengzhong*, Adv. Energy Mater. 2018, 8, 1703246.
(4) Jiang Jiexuan; Wang Qian; Jin Zhiwen*; Zhang Xisheng; Lei Jie; Bin Haijun; Zhang Zhi-Guo; Li Yongfang and Liu Shengzhong*, Adv. Energy Mater. 2018, 8, 1701757.
(5) Wang Qian; Jin Zhiwen*; Chen Da; Bai Dongliang; Bian Hui; Sun Jie; Zhu Ge; Wang Gang* and Liu Shengzhong*, Adv. Energy Mater. 2018, 8, 201800007.

Before 2018
(1) Jin Zhiwen; Zhou Qing; Chen Yanhuan; Mao Peng; Li Hui; Liu Huibiao; Wang Jizheng* and Li Yuliang*, Adv. Mater. 2016, 28, 3697-3702.
(2) Jin Zhiwen; Yuan Mingjian; Li Hui; Yang Hui; Zhou Qing; Liu Huibiao; Lan Xinzheng; Liu Mengxia; Wang Jizheng*; Edward H. Sargent* and Li Yuliang*, Adv. Funct. Mater. 2016, 26, 5284-5289. 
(3) Jin Zhiwen; Yan Jie; Huang Xing; Xu Wei*; Yang Shiyong; Zhu Daoben and Wang Jizheng*, Nano Energy 2017, 40, 376-381.
(4) Wang Qian; Zhang Xisheng; Jin Zhiwen*; Zhang Jingru; Gao Zhenfei; Li Yongfang and Liu Shengzhong*, ACS Energy Lett. 2017, 2, 1479-1486.
(5) Wang Qian; Jin Zhiwen*; Zhang Xisheng; Gao Zhenfei; Xu Hua; Bin Haijun; Zhang Zhi-Guo; Li Yongfang and Liu Shengzhong*, Adv. Mater. Technol. 2017, 2, 1700185.