1) Guijuan Zhao, Lianshan Wang*, Huijie Li, Yulin Meng, Fangzheng Li, Shaoyan Yang, Zhanguo Wang, Structural and optical properties of semi-polar (11–22) InGaN/GaN green light-emitting diode structure, Applied Physics Letters, 2018, 112:052105
2) Guijuan Zhao, Huijie Li, Lianshan Wang*, Yulin Meng, Fangzheng Li, Hongyuan Wei, Shaoyan Yang,·Zhanguo Wang, Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy, Applied Physics A: Materials Science & Processing, 2018, 124:130
3) Guijuan Zhao*, Huijie Li, Lianshan Wang*, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, ShaoyanYang, Zhanguo Wang, Anisotropically biaxial strain in non-polar (11-20) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping. Scientific Reports, 2017, 7: 4497
4) Guijuan Zhao*, Xiaoqing Xu, Huijie Li, Hongyuan Wei, Dongyue Han, Zesheng Ji, Yulin Meng, Lianshan Wang*, Shaoyan Yang, The immiscibility of InAlN ternary alloy, Scientific Reports, 2016, 6: 26600
5) Guijuan Zhao, Lianshan Wang*, Shaoyan Yang, Huijie Li, Hongyuan Wei, Dongyue Han, Zhanguo Wang, Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers, Scientific Reports, 2016, 6: 20787
6) Guijuan Zhao*, Shaoyan Yang*, Guipeng Liu, Changbo Liu, Ling Sang, Chengyan Gu, Xianglin Liu, Hongyuan Wei, Qinsheng Zhu, Zhanguo Wang, Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial layers on r-plane sapphire extracted from X-Ray diffraction, Chinese Physics Letters, 2013, 30: 098102
7) Guijuan Zhao*, Zhiwei Li, Hongyuan Wei, Guipeng Liu, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang, Growth and characterization of an a-plane InxGa1−xN on a r-plane sapphire, Chinese Physics Letters, 2012, 29:117103
8) Lianshan Wang*, Guijuan Zhao, Yulin Meng, Huijie Li, Shaoyan Yang, and Zhanguo Wang, Comparative Investigation of Semi polar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers, Journal of Nanoscience and Nanotechnology, 2018, 18:7446 – 7450
9) Huijie Li*, Guijuan Zhao, Susu Kong, Dongyue Han, Hongyuan Wei, Lianshan Wang, Zhen Chen and Shaoyan Yang*, Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays, Nanoscale, 2015, 7: 16481-16492
10) Huijie Li*, Guijuan Zhao, Hongyuan Wei, Lianshan Wang, Zhen Chen, Shaoyan Yang*, Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates, Nanoscale Research Letters, 2016 11: 270
11) Huijie Li*, Guijuan Zhao, Lianshan Wang, Zhen Chen, Shaoyan Yang, Morphology Controlled Fabrication of InN Nanowires on Brass Substrates, Nanomaterials, 2016, 6: 195
12) Huijie Li*, Guijuan Zhao, Guipeng Liu, Hongyuan Wei, Chunmei Jiao, Shaoyan Yang*, Lianshan Wang, Qinsheng Zhu,Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces,Journal of Applied Physics, 2014,115: 193704
13) Changbo Liu*, Guijuan Zhao, Guipeng Liu, Yafeng Song, Heng Zhang, Dongdong Jin, Zhiwei Li, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu*, Zhanguo Wang,Scattering due to large cluster embedded in quantum wells,Applied Physics Letters, 2013,102: 052105