1.Guipeng Liu*, Xin Wang, Jingze Zhao, Wenjie Chen, Yonghui Tian, Jianhong Yang*, “Modeling a novel InP/InGaAs avalanche photodiode structure: Reducing the excess noise factor”, Optics Communications 435 , 374, 2019
2.Gui-Peng Liu*, Xin Wang, Meng-Nan Li, Zheng-Peng Pang,Yong-Hui Tian, Jian-Hong Yang*, “Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode ” Nuclear science and techniques,29,139,2018
3.Guipeng Liu *, Wenjie Chen , Linsheng Liu, Peng Jin, Yonghui Tian, JianhongYang ,“A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers ”,Optics Communication 374,114,2016
4. Guipeng Liu* ,JinfengZhang , KunyiLu, WenjieChen, YonghuiTian, JianhongYang, “Two-dimensionalelectrongas(2DEG) mobility affected by the In mole fraction fluctuation in InxAl1-xN/GaN heterostructures”,Physica E 83, 207, 2016
5. Guipeng Liu*, Ju Wu, Guijuan Zhao, Shuman Liu, Wei Mao, Yue Hao, Changbo Liu, Shaoyan Yang, Xianglin Liu, Qinsheng Zhu*, and Zhanguo Wang, “Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures”, Applied Physics Letters 100, 082101 ,2012
6. Guipeng Liu*, Ju Wu, Yanwu Lu, Guijuan Zhao, Chengyan Gu, Changbo Liu, Ling Sang, Shaoyan Yang, Xianglin Liu, Qinsheng Zhu*, and Zhanguo Wang, “Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN /GaN multi-quantum wells”, Applied Physics Letters 100, 162102 ,2012
7. Guipeng Liu, Ju Wu, Yanwu Lu, Biao Zhang, Chengming Li, Ling Sang, Yafeng Song, Kai Shi, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, and Zhanguo Wang, “A theoretical calculation of the impact of GaN Cap and AlxGa1-xN barrier thickness fluctuations on two-dimensional electron gas in a GaN/ AlxGa1-xN/GaN heterostructure”, IEEE Transaction on Electron Devices, 58, 4272 ,2011
8.Guipeng Liu*, Ju Wu, Yanwu Lu, Zhiwei Li,Yafeng Song, Chengming Li,Shaoyan Yang, Xianglin Liu, Qinsheng Zhu*, and Zhanguo Wang,“Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures”, Journal of Applied Physics 110, 023705