赵桂娟，女，博士，副教授。2008年7月毕业于浙江大学材料科学与工程专业，获得工学学士学位；后免试进入中国科学院半导体研究所硕博连读，并于2013年7月获中国科学院大学材料物理与化学专业工学博士学位。2013年7月-2018年9月在中国科学院半导体研究所任助理研究员；2018年9月加入兰州大学物理科学与技术学院任副教授。主要从事宽禁带半导体材料及其器件的理论和实验研究、MOCVD生长技术研究等工作。目前主持国家自然基金面上项目和青年项目各一项，作为核心成员参与自然基金面上项目、重大仪器研制项目和国家重点研发计划等多项。在III族氮化物半导体材料的物性模拟、MOCVD外延生长，III族氮化物黄绿光至深紫外波段发光器件等方面开展了深入研究，取得了一系列创新研究成果，先后在Appl. Phys. Lett.、Scientific Reports、Nanoscale、J. Appl. Phys.等国际核心期刊发表论文二十余篇，获得授权和申请的国家发明专利数项。

（1）III族氮化物半导体材料和器件（发光器件、探测器件、电子电力器件）研究； （2）新型半导体光电器件设计制备技术研究。

1) Guijuan Zhao, Lianshan Wang*, Huijie Li, Yulin Meng, Fangzheng Li, Shaoyan Yang, Zhanguo Wang, Structural and optical properties of semi-polar (11–22) InGaN/GaN green light-emitting diode structure, Applied Physics Letters, 2018, 112:052105 2) Guijuan Zhao, Huijie Li, Lianshan Wang*, Yulin Meng, Fangzheng Li, Hongyuan Wei, Shaoyan Yang,·Zhanguo Wang, Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy, Applied Physics A: Materials Science & Processing, 2018, 124:130 3) Guijuan Zhao*, Huijie Li, Lianshan Wang*, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, ShaoyanYang, Zhanguo Wang, Anisotropically biaxial strain in non-polar (11-20) plane InxGa1−xN/GaN layers investigated by X-ray reciprocal space mapping. Scientific Reports, 2017, 7: 4497 4) Guijuan Zhao*, Xiaoqing Xu, Huijie Li, Hongyuan Wei, Dongyue Han, Zesheng Ji, Yulin Meng, Lianshan Wang*, Shaoyan Yang, The immiscibility of InAlN ternary alloy, Scientific Reports, 2016, 6: 26600 5) Guijuan Zhao, Lianshan Wang*, Shaoyan Yang, Huijie Li, Hongyuan Wei, Dongyue Han, Zhanguo Wang, Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers, Scientific Reports, 2016, 6: 20787 6) Guijuan Zhao*, Shaoyan Yang*, Guipeng Liu, Changbo Liu, Ling Sang, Chengyan Gu, Xianglin Liu, Hongyuan Wei, Qinsheng Zhu, Zhanguo Wang, Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial layers on r-plane sapphire extracted from X-Ray diffraction, Chinese Physics Letters, 2013, 30: 098102 7) Guijuan Zhao*, Zhiwei Li, Hongyuan Wei, Guipeng Liu, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang, Growth and characterization of an a-plane InxGa1−xN on a r-plane sapphire, Chinese Physics Letters, 2012, 29:117103 8) Lianshan Wang*, Guijuan Zhao, Yulin Meng, Huijie Li, Shaoyan Yang, and Zhanguo Wang, Comparative Investigation of Semi polar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers, Journal of Nanoscience and Nanotechnology, 2018, 18:7446 – 7450 9) Huijie Li*, Guijuan Zhao, Susu Kong, Dongyue Han, Hongyuan Wei, Lianshan Wang, Zhen Chen and Shaoyan Yang*, Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays, Nanoscale, 2015, 7: 16481-16492 10) Huijie Li*, Guijuan Zhao, Hongyuan Wei, Lianshan Wang, Zhen Chen, Shaoyan Yang*, Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates, Nanoscale Research Letters, 2016 11: 270 11) Huijie Li*, Guijuan Zhao, Lianshan Wang, Zhen Chen, Shaoyan Yang, Morphology Controlled Fabrication of InN Nanowires on Brass Substrates, Nanomaterials, 2016, 6: 195 12) Huijie Li*, Guijuan Zhao, Guipeng Liu, Hongyuan Wei, Chunmei Jiao, Shaoyan Yang*, Lianshan Wang, Qinsheng Zhu，Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces，Journal of Applied Physics, 2014,115: 193704 13) Changbo Liu*, Guijuan Zhao, Guipeng Liu, Yafeng Song, Heng Zhang, Dongdong Jin, Zhiwei Li, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu*, Zhanguo Wang，Scattering due to large cluster embedded in quantum wells，Applied Physics Letters, 2013,102: 052105

（1）国家自然科学基金面上项目， Si图形衬底上非极性/半极性GaN材料外延生长及物性研究， 61874108，2019.1-2022.12，在研，主持； （2）国家自然科学基金青年项目，面向新型绿光发光器件的非极性InGaN量子点材料生长技术研究，61504129，2016.01-2018.12，结题，主持；