Yingtao Li, PhD, professor of School of physical science and technology in Lanzhou university. His research interests focus on the binary transition metal oxides-based resistive random access memory (RRAM) devices which have potential advantages for nonvolatile, simple structure, high speed operation, excellent scalability, low power consumption, high integration density and compatible with the current complementary metal-oxide semiconductor (CMOS) technology. He investigates the resistive switching characteristics and the integration of the emerging RRAM devices. Up to Jun. 2021, he has authored and co-authored more than 60 SCI and EI papers on high rank journals such as Advanced Materials, Advanced Functional Materials, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Nanoscale, etc. The total number of other citations is about 2000. He received Beijing Science and Technology Award in 2014 (2nd class). School of physics science and technology, Lanzhou University - Professor Dec, 2020 / Now School of physics science and technology, Lanzhou University - Associate Professor May, 2014 /Nov. 2020 School of physics science and technology, Lanzhou University - Lecturer Jul. 2011 / Apr. 2014 School of physics science and technology, Lanzhou University - PhD on Microelectronics and Solid-State Electronics Sep. 2006 / Jun. 2011 School of physics science and technology, Lanzhou University - Bachelor on Microelectronics Sep. 2002 / Jun. 2006

1. Semiconductor Device; 2. Nonvolatile Memory Devices; 3. Integrated Circuit.

1. Yingtao Li*, Lujie Yin, Zewei Wu, Xiaoyan Li, Xiaoqiang Song, Xiaoping Gao*, and Liping Fu*, “Improved resistive switching uniformity of SiO2 electrolyte based resistive random access memory device with Cu oxidizable electrode”, IEEE Electron Device Letters, 40, 1599-1601, 2019. 2. Yingtao Li*, Xiaoyan Li, Rongbo Chen, Hong Wang, and Xiaoping Gao, “Effect of interface layer engineering on resistive switching characteristics of ZrO2-based resistive switching devices”, IEEE Transactions on Electron Devices, 65, 5390-5394, 2018. 3. Liping Fu, Sikai Chen, Zewei Wu, Xiaoyan Li, Mingyang You, Xiaolong Fan*, Xiaoping Gao*, and Yingtao Li*, “Impact of resistive switching parameters on resistive random access memory crossbar arrays”, Modern Physics Letters B, 33,2050115,2020. 4. Deyuan Lyu, Cong Hu, Yuting Jiang, Na Bai, Qi Wang, Deyan He, Jing Qi*, Yingtao Li* , “Resistive switching behaviors and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices”, Current Applied Physics, 19, 458–463, 2019. 5. Na Bai, Min Xu, Cong Hu, Yaodong Ma, Qi Wang, Deyan He, Jing Qi*, Yingtao Li* , “Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device”, Materials Science in Semiconductor Processing, 91, 246–251, 2019. 6. Yingtao Li*, Yang Wang, Chuanbing Chen, Peng Yuan, and Xiaoping Gao*, “Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM”, Microelectronic Engineering, 164, 20–22, 2016. 7. Yingtao Li*, Rongrong Li, Liping Fu, Xiaoping Gao, Yang Wang, and Chunlan Tao, “Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays”, Nanotechnology, 26, 425201, 2015. 8. Yingtao Li*, Peng Yuan, Liping Fu, Rongrong Li, Xiaoping Gao, and Chunlan Tao, “Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure”, Nanotechnology, 26, 391001, 2015.（Research Highlight） 9. Yingtao Li*, Xiaoping Gao*, Liping Fu, Peng Yuan, Hong Wang, and Chunlan Tao, “Improvement of resistive switching fluctuations by using one step lift-off process”, Phys. Status Solidi RRL, 9, 594-596, 2015. 10. Yingtao Li*, Rongrong Li, Peng Yuan, Xiaoping Gao*, and Enzi Chen, “Low-cost bidirectional selector based on Ti/TiO2/HfO2/TiO2/Ti stack for bipolar RRAM arrays”, Modern Physics Letters B, 29, 1550244, 2015. 11. Yingtao Li*, Qingchun Gong, Rongrong Li, and Xinyu Jiang, “A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications”, Nanotechnology, 25,185201, 2014.（Research Highlight） 12. Yingtao Li*, Qingchun Gong, and Xinyu Jiang, “Feasibility of Schottky diode as selector for bipolar-type resistive random access memory applications”, Applied Physics Letters, 104, 132105, 2014. 13. Yingtao Li*, Liping Fu, Chunlan Tao, Xinyu Jiang, and Pengxiao Sun, “Feasibility study of using a Zener diode as the selection device for bipolar RRAM and WORM memory arrays”, Journal of Physics D: Applied Physics, 47, 025103, 2014. 14. Yingtao Li*, Xiaoyi Hu, Rongrong Li, Enzi Chen, Qingchun Gong, and Chunlan Tao, “Oxide based two diodes-one resistor structure for bipolar RRAM crossbar array”, Microelectronic Engineering, 130, 35-39, 2014. 15. Yingtao Li*, Xinyu Jiang, and Chunlan Tao, “A self-rectifying bipolar RRAM device based on Ni/HfO2/n+-Si structure”, Modern Physics Letters B, 28, 1450030, 2014. 16. Jinfu Ma*, Shenghua Yuan, Shaolin Yang, Hui Lu, Yingtao Li*, “Poly(3,4-ethylenedioxythiophene)/reduced graphene oxide composites as counter electrodes for high efficiency dye-sensitized solar cells”, Applied Surface Science, 440, 8–15, 2018. 17. Liping Fu, Yingtao Li*, Genliang Han*，Xiaoping Gao, Chuanbing Chen, and Peng Yuan, “Stable resistive switching characteristics of ZrO2-based memory device with low-cost”, Microelectronic Engineering, 172, 26–29, 2017. 18. Xiangyu Gao, Jinfu Ma*, Yingtao Li*, Haicheng Wei, “Graphene quantum dots doped PEDOT and its electrocatalytic performance for oxygen reduction reaction”, International Journal of Electrochemical Science, 12, 11287–11297, 2017. 19. Xiaoping Gao, Liping Fu, Chuanbing Chen, Peng Yuan, and Yingtao Li*, “Self-compliance multilevel storage characteristic in HfO2-based device”, Chinese Physics B, 25 (10), 106102, 2016. 20. 李晓燕, 李颖弢*, 高晓平, 陈传兵, 韩根亮*, “阻变存储器无源高密度交叉阵列研究进展”，科学通报，63, 1–13, 2018. 21. Yingtao Li, Hangbing Lv, Qi Liu, Shibing Long, Ming Wang, Hongwei Xie, Kangwei Zhang, Zongliang Huo, and Ming Liu*, “Bipolar one diode–one resistor integration for high-density resistive memory applications”, Nanoscale, 5, 4785–4789, 2013. 22. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Wei Wang, Qin Wang, Zongliang Huo, Yan Wang, Sen Zhang, Su Liu, and Ming Liu*, “Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device”, IEEE Electron Device Lett., 32 (3), 363-365, 2011. 23. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Yan Wang, Sen Zhang, Wentai Lian, Ming Wang, Kangwei Zhang, Hongwei Xie, Su Liu, and Ming Liu*, “Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer”, Nanotechnology, 22 (25), 254028, 2011. 24. Yingtao Li, Shibing Long, Qi Liu, Hangbing Lv, Su Liu, and Liu Ming*, “An overview of resistive random access memory devices”, Chinese Sci Bull, 56 (28-29), 3072-3078, 2011. 25. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Qin Wang, Yan Wang, Sen Zhang, Su Liu, and Ming Liu*, “Investigation of resistive switching behaviors in WO3-based RRAM devices”, Chinese Physics B, 20 (1), 017305, 2011. 26. Yingtao Li, Shibing Long, Hangbing Lv, Qi Liu, Qin Wang, Yan Wang, Sen Zhang, Su Liu, and Ming Liu*, “Improvement of resistive switching uniformity in TiOx film by nitrogen annealing ”, J. Korean Phys. Soc., 58 (3), L407-L410, 2011. 27. Yingtao Li, Shibing Long, Manhong Zhang, Qi Liu, Lubing Shao, Sen Zhang, Yan Wang, Qingyun Zuo, Su Liu, and Ming Liu*, “Resistive switching properties of Au/ZrO2/Ag structure for low-voltage nonvolatile memory”, IEEE Electron Device Lett., 31 (2), 117-119, 2010. 28. Yingtao Li, Shibing Long, Qi Liu, Qin Wang, Manghong Zhang, Hangbing Lv, Lubing Shao, Yan Wang, Sen Zhang, Qingyun Zuo, Su Liu, and Ming Liu*, “Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures”, Phys. Status Solidi RRL, 4, 124-126, 2010. 29. Naifeng Li, Yue Wang, Haifeng Sun, Junjie Hu, Maoyuan Zheng, Sihao Ye, Qi Wang, Yingtao Li, Deyan He, Jiatai Wang, Guangan Zhang, and Jing Qi*, “Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations”, Applied Physics Letters, 116, 063503, 2020. 30. Ting Zhao, Huifu Xiao, Yingtao Li, Jianhong Yang, Hao Jia, Guanghui Ren, Arnan Mitchell, and Yonghui Tian*, “Independently tunable double Fano resonances based on waveguide-coupled cavities”, Optics Letters, 44(12): 3154-3157, 2019. 31. Hong Wang, Yuanmin Du, Yingtao Li, Bowen Zhu, Wan Ru Leow, Yuangang Li, Jisheng Pan, Tao Wu, and Xiaodong Chen*, “Configurable resistive switching between memory and threshold characteristics for protein-based devices”, Adv. Funct. Mater., 25, 3825–3831, 2015. 32. Pengxiao Sun, Nianduan Lu, Ling Li, Yingtao Li, Hong Wang, Hangbing Lv, Qi Liu, Shibing Long, Su Liu, and Ming Liu*, “Thermal crosstalk in 3-dimensional RRAM crossbar array”, Scientific Reports, 5, 13504, 2015. 33. Pengxiao Sun, LingLi, NianduanLu, Yingtao Li, MingWang, HongweiXie, SuLiu, and Ming Liu*, “Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory”, Journal of Computational Electronics, 13, 432–438, 2014. 34. Hangbing Lv, Yingtao Li, Qi Liu, Shibing Long, Ling Li, and Ming Liu*, “Self-rectifying resistive-switching device with a-Si/WO3 bilayer”, IEEE Electron Device Letters, 34, 229-231, 2013. 35. Hongwei Xie, Qi Liu, Yingtao Li, Hangbing Lv, Ming Wang, Kangwei Zhang, Shibing Long, Su Liu*, and Ming Liu, “Effect of low constant current stress treatment on the performance of Cu/ZrO2/Pt resistive switching device”, Semiconductor Science and Technology, 27, 105007, 2012. 36. Hongwei Xie, Qi Liu, Yingtao Li, Hangbing Lv, Ming Wang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, Shibing Long, Su Liu*, and Ming Liu, “Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM Device”, Semiconductor Science and Technology, 27, 125008, 2012. 37. Ming Wang, Hangbing Lv, Qi Liu, Yingtao Li, Zhongguang Xu, Shibing Long, Hongwei Xie, Kangwei Zhang, Xiaoyu Liu, Haitao Sun, Xiaoyi Yang, and Ming Liu*, “Investigation of one dimension thickness scaling on Cu/HfOx/Pt resistive switching device performance”, IEEE Electron Device Letters, 33, 1556-1558, 2012. 38. Shibing Long, Qi Liu, Hangbing Lv, Yingtao Li, Yan Wang, Sen Zhang, Wentai Lian, Kangwei Zhang, Ming Wang, Hongwei Xie, and Ming Liu*, “Resistive Switching Mechanism of Ag/ZrO2:Cu/Pt memory cell”, Applied Physics A-Materials Science & Processing, 102 (4), pp.915-919, 2011. 39. Sen Zhang, Qi Liu, Wei Wang, Hangbing Lv, Qingyun Zuo, Yan Wang, Yingtao Li, Wentai Lian, Shibing Long, Qin Wang, Ming Liu, “Programming Resistive Switching Memory by a Charged Capacitor”, Applied Physics A, 102, 1003-1007, 2011. 40. Qi Liu, Shibing Long, Wei Wang, Tanachutiwat Sansiri, Yingtao Li, Qin Wang, Manghong Zhang, Junning Chen, and Ming Liu*, “Low power and highly uniform switching in ZrO2-based ReRAM with a Cu nanocrystal insertion layer”, IEEE Electron Device Letters, 31 (11), 1299-1301, 2010. 41. Yan Wang, Qi Liu, Hangbing Lv, Shibing Long, Wei Wang, Yingtao Li, Sen Zhang, Wentai Lian, Jianhong Tang, and Ming Liu*, “Improving the electrical performance of resistive switching memory using doping technology”, Chinese Science Bulletin, 57, 1235-1240, 2012. 42. Qi Liu, Jun Sun, Hangbing Lv, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, and Ming Liu*, “Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM”, Advanced Materials, 24, 1844-1849, 2012. 43. Jun Sun, Qi Liu, Hongwei Xie, Xing Wu, Feng Xu, Tao Xu, Shibing Long, Hangbing Lv, Yingtao Li, Litao Sun, and Ming Liu*, “In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory”, Applied Physics Letters, 102, 053502, 2013. 44. Wentai Lian, Hangbing Lv, Qi Liu, Shibing Long, Wei Wang, Yan Wang, Yingtao Li, Sen Zhang, Yuehua Dai, Junning Chen, and Ming Liu*, “Improved resistive switching uniformity in Cu/HfO2/Pt devices by using current sweeping mode”, IEEE Electron Devices Lett., 32 (8), 1053-1055, (2011). 45. Yan Wang, Qi Liu, Shibing Long, Wei Wang, Qin Wang, Manhong Zhang, Sen Zhang, Yingtao Li, Qingyun Zuo, Jianhong Yang, and Ming Liu, “Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications”, Nanotechnology, 21, 045202, (2010). 46. Qingyun Zuo, Shibing Long, Shiqian Yang, Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, Ming Liu, “ZrO2–Based Memory Cell with a Self-rectifying Effect for Crossbar WORM Memory Application”, IEEE Electron Devices Lett., 31 (4), pp. 344-346, (2010). 47. Yan Wang, Hangbing Lv, Wei Wang, Qi Liu, Shibing Long, Qin Wang, Zongliang Huo, Sen Zhang, Yingtao Li, Qingyun Zuo, Wentai Lian, Jianhong Yang, and Ming Liu, “Highly stable radiation-hardened resistive-switching memory”, IEEE Electron Devices Lett., 31 (12), pp. 1470-1472, (2010). 48. Qingyun Zuo, Shibing Long, Qi Liu, Sen Zhang, Qin Wang, Yingtao Li, Yan Wang, and Ming Liu*, “Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory”, J. Appl. Phys., 106, 073724 (2009). 49. Yan Wang, Qi Liu, Hangbing Lv, Shibing Long, Sen Zhang, Yingtao Li, Wentai Lian, Jianhong Yang, and Ming Liu, “CMOS compatible nonvolatile memory devices based on SiO2/Cu/SiO2 multilayer films”, Chinese Physics Letters, 28 (7), 077201, (2011). 50. Dongdong Qin*, Yang Li, Xingming Ning, Qiuhong Wang, Caihua He, Jingjing Quan, Jing Chen, Yingtao Li, Xiaoquan Lu*, Chunlan Tao*, “A nanostructured hematite film prepared by a facile “top down” method for application in photoelectrochemistry”, Dalton Transactions, 45(41), 16221-16230, (2016).

National Natural Science Foundation of China (NSFC) 2018.1-2021.12 (No.61774079) National Natural Science Foundation of China (NSFC) 2016.1-2016.12 (No.61574070) National Natural Science Foundation of China (NSFC) 2014.1-2016.12 (No.61306148)

Beijing Science and Technology Award in 2014 (2nd class).